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Proceedings Paper

Ion implantation into Si covered by HfO2 or SiO2 film
Author(s): Hao Shi; Min Yu; Ru Huang; Xing D. Zhang; Yangyuan Wang
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Paper Abstract

Ion implantations into HfO2 and SiO2 are simulated comparatively by using a molecular dynamics simulator LEACS. With precise physical models and high efficiency algorithms implemented in LEACS, the simulated results accurately agree with the SIMS data. Based on the verification of the LEACS simulator, Oxide Thickness Modulation Effect (OTME for short) has been quantitatively investigated by simulating implantations in HfO2/Si and SiO2/Si multiplayer structures, respectively. A much more drastic OTME for implantation in HfO2/Si is observed from simulation. It is found that if HfO2 replaces SiO2 as the gate dielectric, the shift of the range profiles in Si substrate is in the order of several 10%s of the total junction depth, which will have a significant impact on MOS device performance in IC process of next decade.

Paper Details

Date Published: 8 December 2004
PDF: 4 pages
Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.607558
Show Author Affiliations
Hao Shi, Peking Univ. (China)
Min Yu, Peking Univ. (China)
Ru Huang, Peking Univ. (China)
Xing D. Zhang, Peking Univ. (China)
Yangyuan Wang, Peking Univ. (China)

Published in SPIE Proceedings Vol. 5774:
Fifth International Conference on Thin Film Physics and Applications
Junhao Chu; Zongsheng Lai; Lianwei Wang; Shaohui Xu, Editor(s)

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