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Proceedings Paper

Influence of process parameters on fabrication of PZT(53/47) thick films by a dip-coating process
Author(s): Xiyun He; Yong Zhang; Pingsun Qiu; Aili Ding
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Paper Abstract

Crack-free polycrystalline PbZr0.53Ti0.47O3 (PZT(53/47) thick films (1~30μm) with peroviskite structure have been prepared from a dip-coating process. The influence of withdrawal speed and precursor solution concentration on the morphology of the films was examined. The effects of the substrate characteristics on the film phase structure and microstructure were investigated and evaluated. The ferroelectric and dielectric properties have been examined and discussed. PZT (53/47) thick films on Pt/Ti/SiO2 wafer and Pt/Ti foil substrates all exhibit excellent electric properties, Pr: 32~34 μmC/cm2; Ec: 32~35kV/cm, εr 900~940; tanδ: 0.02~0.04. These materials promise a good application in micro-devices including micro-pump, micro-actuator, etc.

Paper Details

Date Published: 8 December 2004
PDF: 4 pages
Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.607370
Show Author Affiliations
Xiyun He, Shanghai Institute of Ceramics, CAS (China)
Yong Zhang, Shanghai Institute of Ceramics, CAS (China)
Jingdezhen Institute of Ceramics (China)
Pingsun Qiu, Shanghai Institute of Ceramics, CAS (China)
Aili Ding, Shanghai Institute of Ceramics, CAS (China)


Published in SPIE Proceedings Vol. 5774:
Fifth International Conference on Thin Film Physics and Applications
Junhao Chu; Zongsheng Lai; Lianwei Wang; Shaohui Xu, Editor(s)

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