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Proceedings Paper

Structural ordering in amorphous silicon thin film due to post hydrogen plasma annealing
Author(s): Yunjun Rui; Jiaxin Mei; Jun Xu; Ling Yang; Wei Li; Kunji Chen
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Paper Abstract

The effect of hydrogen plasma annealing on the microstructural transition from disorder to order in amorphous silicon film is studied in this paper. Combined with the Fourier Transmit Infrared spectroscopy, Raman scattering and absorption spectra, it is found that there exists two steps for the reaction between atomic hydrogen and Si network. It is shown that the hydrogen plasma treatment conditions strongly influence the microstructures of the amorphous Si films.

Paper Details

Date Published: 8 December 2004
PDF: 4 pages
Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.607306
Show Author Affiliations
Yunjun Rui, Nanjing Univ. (China)
Nanjing Univ. of Technology (China)
Jiaxin Mei, Nanjing Univ. (China)
Jun Xu, Nanjing Univ. (China)
Ling Yang, Nanjing Univ. (China)
Wei Li, Nanjing Univ. (China)
Kunji Chen, Nanjing Univ. (China)

Published in SPIE Proceedings Vol. 5774:
Fifth International Conference on Thin Film Physics and Applications
Junhao Chu; Zongsheng Lai; Lianwei Wang; Shaohui Xu, Editor(s)

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