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Proceedings Paper

Spectroscopical analyis of strained silicon quantum wells
Author(s): J. McCarthy; E. Ni Mhuircheartaigh; K. Lyutovich; M. Oehme; T. S. Perova; R. A. Moore; W. Blau
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Paper Abstract

In this study, Strained silicon Quantum Wells (QW) were characterised using a variety of micro-scopical techniques. Among the techniques used were Transmission Electron Microscopy (TEM), Elemental Electron Loss Spectroscopy (EELS), and micro-Raman spectroscopy. A combination of these methods facilitates investigation of the structure, the strain, and the dislocations present in such materials. Both conventional and High Resolution Transmission Electron Microscopy (HRTEM) are used to analyse strained silicon quantum wells (QW). These techniques allow for structure analysis at the atomic level. Elemental Electron Loss Spectroscopy (EELS) is used in tandem with other analytical techniques in order to give a quantitative analysis of the structures. The presence of various layers is independently verified using EELS, while layer depth and concentration profiles are also established. Relaxation levels in the virtual substrate as well as the strain in Si quantum wells are calculated using Raman spectroscopy.

Paper Details

Date Published: 2 June 2005
PDF: 8 pages
Proc. SPIE 5824, Opto-Ireland 2005: Nanotechnology and Nanophotonics, (2 June 2005); doi: 10.1117/12.606601
Show Author Affiliations
J. McCarthy, Univ. of Dublin, Trinity College (Ireland)
E. Ni Mhuircheartaigh, Univ. of Dublin, Trinity College (Ireland)
K. Lyutovich, Univ. Stuttgart (Germany)
M. Oehme, Univ. Stuttgart (Germany)
T. S. Perova, Univ. of Dublin, Trinity College (Ireland)
R. A. Moore, Univ. of Dublin, Trinity College (Ireland)
W. Blau, Univ. of Dublin, Trinity College (Ireland)

Published in SPIE Proceedings Vol. 5824:
Opto-Ireland 2005: Nanotechnology and Nanophotonics
David Kennedy; Werner J. Blau; John Colreavy, Editor(s)

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