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Proceedings Paper

Silica microspheres as high-Q microcavities for semiconductor quantum-dot lasers
Author(s): Jean Hare; Sebastien Steiner; Fedja Orucevic; Valerie Lefevre-Seguin
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Paper Abstract

We report an experiment where InAs/GaAs self-organized Quantum Dots (QD) are coupled to the evanescent field of very-high-Q Whispering Gallery Modes (WGM) in a silica microsphere. The high performance of these microcavity and nanoemitters allowed to achieve very low threshold (200 μm) laser operation at room temperature, involving a few thousands of QD. We show that such a low threshold relies heavily on WGM deconfinement and reconstruction in the micromesa etched in GaAs sample. Next, we present some prospects on further experiments involving various semiconductor nanostructures coupled to microspheres or to silica microtoroids integrated on a Si chip (as recently introduced by K.J.~Vahala and coworkers at Caltech).

Paper Details

Date Published: 25 March 2005
PDF: 10 pages
Proc. SPIE 5729, Optoelectronic Integrated Circuits VII, (25 March 2005); doi: 10.1117/12.605692
Show Author Affiliations
Jean Hare, Lab. Kastler Brossel, Ecole Normale Superieure (France)
Sebastien Steiner, Lab. Kastler Brossel, Ecole Normale Superieure (France)
Fedja Orucevic, Lab. Kastler Brossel, Ecole Normale Superieure (France)
Valerie Lefevre-Seguin, Lab. Kastler Brossel, Ecole Normale Superieure (France)

Published in SPIE Proceedings Vol. 5729:
Optoelectronic Integrated Circuits VII
Louay A. Eldada; El-Hang Lee, Editor(s)

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