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Proceedings Paper

10 x 132 CMOS/CCD readout with 25-um pitch and on-chip signal processing including CDS and TDI
Author(s): Lester J. Kozlowski; Scott A. Cabelli; Robert E. Kezer; William E. Kleinhans
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Paper Abstract

A 10 x 132 CMOS/CCD readout has been developed for low background (photon incidence less than 10 exp 12 photons/sq cm s) IR applications requiring fine orthoscan pitch (25 microns), on-chip signal processing including time delay integration (TDI) and correlated double sampling, high sensitivity, and high speed at operating temperatures compatible with passive or thermoelectric coolers. When hybridized to SWIR (2.5 microns) detectors, TDI channel read noise of not greater than 10 e(-) was measured at 145 K operating temperature. This implies a minimum per pixel read noise of about 3 electrons, approaching the goal of about 1 e(-) read noise needed for stringent SWIR applications including NASA's MOI and NGST missions.

Paper Details

Date Published: 1 July 1992
PDF: 9 pages
Proc. SPIE 1684, Infrared Readout Electronics, (1 July 1992); doi: 10.1117/12.60511
Show Author Affiliations
Lester J. Kozlowski, Rockwell International Science Ctr. (United States)
Scott A. Cabelli, Rockwell International Science Ctr. (United States)
Robert E. Kezer, Valley Oak Semiconductor (United States)
William E. Kleinhans, Valley Oak Semiconductor (United States)

Published in SPIE Proceedings Vol. 1684:
Infrared Readout Electronics
Eric R. Fossum, Editor(s)

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