Proceedings Paper
Buried-channel CCDs with high-charge transfer efficiency and large-charge capacity for low-temperature readout of long-wavelength infrared detectors| Format | Member Price | Non-Member Price |
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Paper Abstract
Double ion implantation has been used to fabricate buried-channel CCDs that exhibit good charge transfer efficiency at temperatures down to 50 K while retaining large charge storage capacity. Monolithic IR focal plane arrays integrating such CCDs and Ge(x)Si(1-x)/Si heterojunction detectors show good imaging performance in both the 3-5 micron and 8-10 micron IR spectral bands.
Paper Details
Date Published: 1 July 1992
PDF: 8 pages
Proc. SPIE 1684, Infrared Readout Electronics, (1 July 1992); doi: 10.1117/12.60510
Published in SPIE Proceedings Vol. 1684:
Infrared Readout Electronics
Eric R. Fossum, Editor(s)
PDF: 8 pages
Proc. SPIE 1684, Infrared Readout Electronics, (1 July 1992); doi: 10.1117/12.60510
Show Author Affiliations
Ana Lise Lattes, Lincoln Lab./MIT (United States)
Bor-Yeu Tsaur, Lincoln Lab./MIT (United States)
Published in SPIE Proceedings Vol. 1684:
Infrared Readout Electronics
Eric R. Fossum, Editor(s)
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