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Proceedings Paper

Temperature dependence of silicon photodiode quantum efficiency: theoretical and experimental results
Author(s): Thierry P. Appourchaux; Didier D. E. Martin; Udo Telljohann
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Paper Abstract

The temperature dependence of photodiodes quantum efficiency for different processes (deep diffused and ion implanted) and resistivities (10 and 100 (Omega) .cm) were measured. To better predict their behavior, a comparison was made with a simple uni-dimensional p-n junction model. This includes band-gap, depletion region width, diffusion constants, mobilities, intrinsic carrier concentration, absorption coefficient, and refractive index temperature functions. The surface recombination length of the minority carriers and the concentration of recombination centers were fitted to the experimental data.

Paper Details

Date Published: 1 July 1992
PDF: 12 pages
Proc. SPIE 1679, Physics and Simulation of Optoelectronic Devices, (1 July 1992); doi: 10.1117/12.60488
Show Author Affiliations
Thierry P. Appourchaux, European Space Agency/ESTEC (Netherlands)
Didier D. E. Martin, European Space Agency/ESTEC (Netherlands)
Udo Telljohann, European Space Agency/ESTEC (Netherlands)

Published in SPIE Proceedings Vol. 1679:
Physics and Simulation of Optoelectronic Devices
David Yevick, Editor(s)

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