Proceedings Paper
Saturation spectroscopy of carriers in semiconductor multiple-quantum-well structures| Format | Member Price | Non-Member Price |
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Paper Abstract
We have performed far infrared cyclotron resonance absorption saturation experiments of both electrons (GaAs/AlGaAs MQW structure) and holes (InGaAs/GaAs <111> strained- layer superlattice) with the Free Electron Laser at UC Santa Barbara, Calif. The Landau level lifetime is found to be laser power dependent at high powers, and is longer for electrons than for holes. Reasons are discussed. Proper analysis of the transmission data is crucial for strongly absorbing multi-layer structures to obtain meaningful results. Limitation of the 3-level model used to determine the lifetimes are also discussed.
Paper Details
Date Published: 1 July 1992
PDF: 7 pages
Proc. SPIE 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV, (1 July 1992); doi: 10.1117/12.60466
Published in SPIE Proceedings Vol. 1678:
Spectroscopic Characterization Techniques for Semiconductor Technology IV
Orest J. Glembocki, Editor(s)
PDF: 7 pages
Proc. SPIE 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV, (1 July 1992); doi: 10.1117/12.60466
Show Author Affiliations
Radha Ranganathan, SUNY/Buffalo (United States)
Jann P. Kaminski, Univ. of California/Santa Barbara (United States)
Wei Jian Li, SUNY/Buffalo (United States)
Jann P. Kaminski, Univ. of California/Santa Barbara (United States)
Wei Jian Li, SUNY/Buffalo (United States)
Jiping Cheng, SUNY/Buffalo (United States)
Bruce D. McCombe, SUNY/Buffalo (United States)
Bruce D. McCombe, SUNY/Buffalo (United States)
Published in SPIE Proceedings Vol. 1678:
Spectroscopic Characterization Techniques for Semiconductor Technology IV
Orest J. Glembocki, Editor(s)
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