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Proceedings Paper

Optical studies of interface roughness in GaAs/AlAs quantum-well structures (Invited Paper)
Author(s): Daniel G. Gammon; Benjamin V. Shanabrook; D. Scott Katzer
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Paper Abstract

We review our photoluminescence results concerning the structural disorder of the interfaces in GaAs/AlAs quantum well structures. In the highest quality samples structural disorder exists as monolayer—high islands. We show the types of possible luminescence spectra which can occur in quantum wells in which the bottom and top interfaces have differently-sized islands. It is shown how luminescence spectra are sensitive to both large and small island structures —whether they occur on the same interface or occur separately on the top and bottom interfaces.

Paper Details

Date Published: 1 July 1992
PDF: 10 pages
Proc. SPIE 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV, (1 July 1992); doi: 10.1117/12.60441
Show Author Affiliations
Daniel G. Gammon, Naval Research Lab. (United States)
Benjamin V. Shanabrook, Naval Research Lab. (United States)
D. Scott Katzer, Naval Research Lab. (United States)

Published in SPIE Proceedings Vol. 1678:
Spectroscopic Characterization Techniques for Semiconductor Technology IV
Orest J. Glembocki, Editor(s)

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