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Proceedings Paper

Effect of hard bake process on LER
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Paper Abstract

Line-edge roughness (LER) continues to be one of the biggest challenges as the CD size shrinks down to sub 100 nm. It is shown that resist components as well as illumination conditions play a big role. Influence of resist components in both 248 and 193nm chemically amplified resist formulations has been reported but the root cause is not fully understood and may be platform or even specific formulation dependent. This paper attempts to tackle the issue from the processing side. Effects of a simple hard bake process on the LER were studied. In the hard bake process, a given resist pattern was typically baked close to the glass-transition temperature after the development process. LER improved dramatically due to melting down of the rough surface. However, the wall angle of the edge lines also started to degrade at the optimum hard bake temperature. Studies on the effects of polymer Tg, hard bake temperature and time and the issues of the process are discussed.

Paper Details

Date Published: 4 May 2005
PDF: 8 pages
Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); doi: 10.1117/12.604401
Show Author Affiliations
Munirathna Padmanaban, AZ Electronic Materials (United States)
David Rentkiewicz, AZ Electronic Materials (United States)
SangHo Lee, AZ Electronic Materials (United States)
Chisun Hong, AZ Electronic Materials (United States)
Dongkwan Lee, AZ Electronic Materials (United States)
Dalil Rahman, AZ Electronic Materials (United States)
Raj Sakamuri, AZ Electronic Materials (United States)
Ralph R. Dammel, AZ Electronic Materials (United States)

Published in SPIE Proceedings Vol. 5753:
Advances in Resist Technology and Processing XXII
John L. Sturtevant, Editor(s)

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