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Proceedings Paper

Resonant cavity enhanced InGaAs photodiodes for high speed detection of 1.55 µm infrared radiation
Author(s): J. Kaniewski; J. Muszalski; J. Pawluczyk; J. Piotrowski
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Paper Abstract

Resonant cavity enhanced photodetectors are promising candidates for applications in high-speed optical communications due to their high quantum efficiency and large bandwidth. This is a consequence of placing the thin absorber of the photodetector inside a Fabry-Perot microcavity so the absorption could be enhanced by recycling the photons with resonance wavelength. The performance of uncooled resonant cavity enhanced InGaAs/InAlAs photovoltaic devices operating near 1.55 μm has been studied both theoretically and experimentally. The analyses include two different types of structures with cavity end mirrors made of semiconducting and metallic reflectors as well as semiconducting and hybrid (dielectric Si3N4/SiO2 + metal) Bragg reflectors. Optimization of the device design includes: absorption layer thickness, position of absorption layer within the cavity and number of layers in distributed Bragg reflectors. Dependence of absorption on wavelength and incidence angle are discussed. Various issues related to applications of resonance cavity enhanced photodiodes in optical systems are considered. Practical devices with metallic and hybrid mirrors were fabricated by molecular beam epitaxy and by microwave-compatible processing. A properly designed device of this type has potential for subpicosecond response time.

Paper Details

Date Published: 31 May 2005
PDF: 10 pages
Proc. SPIE 5783, Infrared Technology and Applications XXXI, (31 May 2005); doi: 10.1117/12.602687
Show Author Affiliations
J. Kaniewski, Institute of Electron Technology (Poland)
J. Muszalski, Institute of Electron Technology (Poland)
J. Pawluczyk, Vigo System (Poland)
J. Piotrowski, Military Institute of Armament Technology (Poland)

Published in SPIE Proceedings Vol. 5783:
Infrared Technology and Applications XXXI
Bjorn F. Andresen; Gabor F. Fulop, Editor(s)

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