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Proceedings Paper

Development of high-power green light emitting diode dies in piezoelectric GaInN/GaN
Author(s): Christian Wetzel; Yong Xia; Theeradetch Detchprohm; Peng Li; Jeffrey S. Nelson
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Paper Abstract

Increasing emission power and efficiency in green light emitting diodes is one of the big challenges towards all-solid-state lighting. The prime challenge lies in the combination of extension of wavelength from 470 nm blue to 525 nm green while maintaining the emission power level. Commonly a steep decrease in power is observed. In a broad development effort we have been able to ameliorate that decrease significantly and obtain bare die performance at 525 nm of 1.6 mW at 20 mA for 350x350 μm2 dies. Here we discuss critical die performance and wafer yield aspects of our optimization approach to the active layer of the GaInN/GaN quantum wells.

Paper Details

Date Published: 7 March 2005
PDF: 6 pages
Proc. SPIE 5739, Light-Emitting Diodes: Research, Manufacturing, and Applications IX, (7 March 2005); doi: 10.1117/12.602144
Show Author Affiliations
Christian Wetzel, Rensselaer Polytechnic Institute (United States)
Yong Xia, Rensselaer Polytechnic Institute (United States)
Theeradetch Detchprohm, Rensselaer Polytechnic Institute (United States)
Peng Li, Uniroyal Optoelectronics (United States)
Jeffrey S. Nelson, Uniroyal Optoelectronics (United States)

Published in SPIE Proceedings Vol. 5739:
Light-Emitting Diodes: Research, Manufacturing, and Applications IX
Steve A. Stockman; H. Walter Yao; E. Fred Schubert, Editor(s)

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