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Proceedings Paper

Growth and characterization of beta-Ga2O3 single crystals as transparent conductive substrates for GaN
Author(s): Kiyoshi Shimamura; Encarnacion G. Villora; Kazuo Aoki; Noboru Ichinose
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Paper Abstract

Large size single crystals of beta-Ga2O3 with 1 inch in diameter have been grown by the floating zone technique. The stable growth conditions have been determined by the examination of the crystal structure. Wafers have been cut and fine polished in the (100), (010) and (001) planes. These were highly transparent in the visible and near UV, as well as electrically conductive, indicating the potential use of beta-Ga2O3 as a substrate for optoelectic devices operating in the visible/near UV and with vertical current flow. Epitaxial growth of nitride compounds by the metalorganic vapor phase epitaxy (MOVPE) technique is demonstrated on beta-Ga2O3 single crystal substrates. High-quality (0001) GaN epi-layers with a narrow bandedge luminescence are obtained using a low temperature conductive buffer layer. InGaN multi-quantum well (MQW) structures were also successfully grown. The first blue light-emitting diode (LED) on beta-Ga2O3 with vertical current injection is demonstrated.

Paper Details

Date Published: 28 April 2005
PDF: 12 pages
Proc. SPIE 5722, Physics and Simulation of Optoelectronic Devices XIII, (28 April 2005); doi: 10.1117/12.601956
Show Author Affiliations
Kiyoshi Shimamura, Waseda Univ. (Japan)
Encarnacion G. Villora, Waseda Univ. (Japan)
Kazuo Aoki, Koha Co., Ltd. (Japan)
Noboru Ichinose, Waseda Univ. (Japan)

Published in SPIE Proceedings Vol. 5722:
Physics and Simulation of Optoelectronic Devices XIII
Marek Osinski; Fritz Henneberger; Hiroshi Amano, Editor(s)

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