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Proceedings Paper

BEOL process technology based on proximity electron lithography: demonstration of the via-chain yield comparable with ArF lithography
Author(s): S. Nohdo; S. Omori; K. Iwase; M. Yoshizawa; T. Motohashi; K. Oguni; K. Nakayama; H. Egawa; T. Takeda; T. Morikawa; S. Nohama; H. Nakano; T. Kitagawa; S. Moriya; H. Kawahira
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Paper Abstract

Proximity electron lithography (PEL) using the ultra-thin tri-layer resist system has been successfully integrated in our dual-damascene Cu/low-k interconnects technology for the 90-nm node. Critical comparison between conventional ArF lithography and PEL as to the via-chain yield for test element groups (TEGs) including approximately 2.9 million via chains was performed to demonstrate its production feasibility.

Paper Details

Date Published: 6 May 2005
PDF: 11 pages
Proc. SPIE 5751, Emerging Lithographic Technologies IX, (6 May 2005); doi: 10.1117/12.601733
Show Author Affiliations
S. Nohdo, Sony Corp. (Japan)
S. Omori, Sony Corp. (Japan)
K. Iwase, Sony Corp. (Japan)
M. Yoshizawa, Sony Corp. (Japan)
T. Motohashi, Sony Corp. (Japan)
K. Oguni, Sony Corp. (Japan)
K. Nakayama, Sony Corp. (Japan)
H. Egawa, Sony Computer Entertainment Fab (Japan)
T. Takeda, Sony Computer Entertainment Fab (Japan)
T. Morikawa, Sony Computer Entertainment Fab (Japan)
S. Nohama, Sony Corp. (Japan)
H. Nakano, Sony Corp. (Japan)
T. Kitagawa, Sony Corp. (Japan)
S. Moriya, Sony Corp. (Japan)
H. Kawahira, Sony Corp. (Japan)

Published in SPIE Proceedings Vol. 5751:
Emerging Lithographic Technologies IX
R. Scott Mackay, Editor(s)

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