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Proceedings Paper

Comprehensive CD uniformity control across lithography and etch
Author(s): Qiaolin Zhang; Cherry Tang; Tony Hsieh; Nick Maccrae; Bhanwar Singh; Kameshwar Poolla; Costas J. Spanos
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Paper Abstract

It has been shown that across-wafer CD (critical dimension) uniformity can be improved by compensating for systematic CD variations through the litho-etch sequence by tuning the across-wafer PEB temperature profile1. Earlier work describes the approach to enhance post-develop CD uniformity (CDU) utilizing temperature-to-offset model in conjunction with resist CD's PEB sensitivity. Taking into consideration CD variation induced by plasma etch, we then develop a methodology to improve the post-etch poly CDU. This is done using constrained quadratic optimization techniques. Considering the fact that isolated, semi-isolated and dense lines in multiple sizes coexist on an actual chip, it is desirable to have simultaneous CDU control for isolated, semi-islolated and dense lines of various sizes. In this paper we expand our CDU control concept to simultaneous CDU control for multiple CD targets and propose the use of multi-objective and minimax optimization schemes. A combination of experimental and simulated runs is used to test this approach.

Paper Details

Date Published: 10 May 2005
PDF: 10 pages
Proc. SPIE 5752, Metrology, Inspection, and Process Control for Microlithography XIX, (10 May 2005); doi: 10.1117/12.601087
Show Author Affiliations
Qiaolin Zhang, Univ. of California/Berkeley (United States)
Cherry Tang, Advanced Micro Devices (United States)
Tony Hsieh, Advanced Micro Devices (United States)
Nick Maccrae, Advanced Micro Devices (United States)
Bhanwar Singh, Advanced Micro Devices (United States)
Kameshwar Poolla, Univ. of California/Berkeley (United States)
Costas J. Spanos, Univ. of California/Berkeley (United States)

Published in SPIE Proceedings Vol. 5752:
Metrology, Inspection, and Process Control for Microlithography XIX
Richard M. Silver, Editor(s)

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