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Proceedings Paper

Laser damage threshold measurements of AgGaSe2 crystal at 9 um
Author(s): Madhu A. Acharekar; James L. Montgomery; Ronald J. Rapp
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Paper Abstract

Silver gallium selenide (AgGaSei) crystal for efficient second-harmonic-generation of C02 laser lines has been demonstrated using a pulsed laser. However, the use of this crystal in continuous wave (CW) lasers is limited due to its low laser damage threshold. In this paper, laser damage threshold measurements obtained using a 9 µm C02 laser will be discussed. The data obtained for the frequency doubling of 9 µm to 4.5 µm will be presented.

Paper Details

Date Published: 29 July 1992
PDF: 9 pages
Proc. SPIE 1624, Laser-Induced Damage in Optical Materials: 1991, (29 July 1992); doi: 10.1117/12.60090
Show Author Affiliations
Madhu A. Acharekar, Schwartz Electro-Optics, Inc. (United States)
James L. Montgomery, Schwartz Electro Optics, Inc. (United States)
Ronald J. Rapp, Wright Labs. (United States)

Published in SPIE Proceedings Vol. 1624:
Laser-Induced Damage in Optical Materials: 1991
Harold E. Bennett; Lloyd L. Chase; Arthur H. Guenther; Brian Emerson Newnam; M. J. Soileau, Editor(s)

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