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Proceedings Paper

Metrology of laser-produced plasma light source for EUV lithography
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Paper Abstract

Metrology concepts and related results are discussed for characterization of extreme ultraviolet (EUV) light sources based on laser-produced plasmas using metal foil and droplet targets. Specific designs of narrow-band EUV detectors employing multilayer mirrors and broadband detectors for droplet steering are described. Spatially resolved plasma imaging using in-band EUV pinhole cameras is discussed. A grazing-incidence flat-field EUV spectrometer is described that has been employed for spectroscopy in the 6 nm - 22 nm range. In addition, spectroscopic data of out-of-band radiation in the ultraviolet and visible spectral regions are presented. Results obtained for different wavelengths of the incident laser radiation and for both tin- and lithium foil- and droplet- targets are discussed.

Paper Details

Date Published: 10 May 2005
PDF: 9 pages
Proc. SPIE 5752, Metrology, Inspection, and Process Control for Microlithography XIX, (10 May 2005); doi: 10.1117/12.600809
Show Author Affiliations
N. R. Boewering, Cymer, Inc. (United States)
J. R. Hoffman, Cymer, Inc. (United States)
O. V. Khodykin, Cymer, Inc. (United States)
C. L. Rettig, Cymer, Inc. (United States)
B. A. M. Hansson, Cymer, Inc. (United States)
A. I. Ershov, Cymer, Inc. (United States)
I. V. Fomenkov, Cymer, Inc. (United States)

Published in SPIE Proceedings Vol. 5752:
Metrology, Inspection, and Process Control for Microlithography XIX
Richard M. Silver, Editor(s)

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