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Proceedings Paper

Study on 193-nm immersion interference lithography
Author(s): Lon A. Wang; W. C. Chang; K. Y. Chi; S. K. Liu; C. D. Lee
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Paper Abstract

We report bubble scattering effects on photoresist when a 193nm immersion interferometric lithographic system is employed. According to Mie theory and FDTD simulation, the scattering effect of a bubble becomes significant and may cause defects on a resist pattern when its diameter is greater than 60nm. Some preliminary experimental results are also included.

Paper Details

Date Published: 22 January 2005
PDF: 15 pages
Proc. SPIE 5720, Micromachining Technology for Micro-Optics and Nano-Optics III, (22 January 2005); doi: 10.1117/12.600795
Show Author Affiliations
Lon A. Wang, National Taiwan Univ. (Taiwan)
W. C. Chang, National Taiwan Univ. (Taiwan)
K. Y. Chi, National Taiwan Univ. (Taiwan)
S. K. Liu, National Taiwan Univ. (Taiwan)
C. D. Lee, National Taiwan Univ. (Taiwan)

Published in SPIE Proceedings Vol. 5720:
Micromachining Technology for Micro-Optics and Nano-Optics III
Eric G. Johnson; Gregory P. Nordin; Thomas J. Suleski, Editor(s)

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