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Proceedings Paper

Fluids and resists for hyper NA immersion lithography
Author(s): J. Christopher Taylor; Ramzy Shayib; Sumarlin Goh; Charles R. Chambers; Will Conley; Shang-Ho Lin; C. Grant Willson
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Paper Abstract

Immersion lithography at 193 nm has rapidly changed status from a novel technology to the top contender for the 45 nm device node. The likelihood of implementation has raised interest in extending its capabilities. One way to extend immersion lithography would be to develop immersion fluids and resists with higher refractive indices than those currently available (n193 nm = 1.44 for water and n193 nm = 1.7 for typical resists). This work explores methods by which the index of refraction of immersion fluid could be increased to that of calcium fluoride (n193 nm = 1.56) or higher. A survey of the optical properties of various aqueous solutions was performed using spectroscopic ellipsometry. The refractive index of the solutions is measured to identify additives that might increase index while maintaining suitable pH, viscosity and contact angle. Also, ways to increase the index of model resist systems were explored. Higher index resists would help improve contrast in hyper-NA exposure tools.

Paper Details

Date Published: 4 May 2005
PDF: 11 pages
Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); doi: 10.1117/12.600771
Show Author Affiliations
J. Christopher Taylor, Univ. of Texas/Austin (United States)
Ramzy Shayib, Univ. of Texas/Austin (United States)
Sumarlin Goh, Univ. of Texas/Austin (United States)
Charles R. Chambers, Univ. of Texas/Austin (United States)
Will Conley, Freescale Semiconductor, Inc. (United States)
SEMATECH, Inc. (United States)
Shang-Ho Lin, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
SEMATECH, Inc. (Taiwan)
C. Grant Willson, Univ. of Texas/Austin (United States)

Published in SPIE Proceedings Vol. 5753:
Advances in Resist Technology and Processing XXII
John L. Sturtevant, Editor(s)

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