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Proceedings Paper

Approximation of three dimensional mask effects with two dimensional features
Author(s): Min Bai; Lawrence S. Melvin III; Qiliang Yan; James P. Shiely; Bradley J. Falch; Chong-Cheng Fu; Ruoping Wang
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Paper Abstract

As an important resolution enhancement technique (RET), alternating aperture phase shift masks (AAPSM) has been widely adopted in 90 nm technology node and beyond. Mask topographical effect due to the 3D nature of the shifter features is becoming an increasingly important factor in lithography modeling. Rigorous 3D modeling of PSM is very computationally demanding thus impractical for full chip optical proximity correction (OPC). Here we introduce an alternative approach employing boundary layers to effectively approximate the 3D mask effect. We will present the model calibration versus real wafer data using the boundary layers and the corresponding OPC correction flow.

Paper Details

Date Published: 6 May 2005
PDF: 9 pages
Proc. SPIE 5751, Emerging Lithographic Technologies IX, (6 May 2005); doi: 10.1117/12.600547
Show Author Affiliations
Min Bai, Synopsys Inc. (United States)
Lawrence S. Melvin III, Synopsys Inc. (United States)
Qiliang Yan, Synopsys Inc. (United States)
James P. Shiely, Synopsys Inc. (United States)
Bradley J. Falch, Synopsys Inc. (United States)
Chong-Cheng Fu, Freescale Semiconductor Inc. (United States)
Ruoping Wang, Freescale Semiconductor Inc. (United States)

Published in SPIE Proceedings Vol. 5751:
Emerging Lithographic Technologies IX
R. Scott Mackay, Editor(s)

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