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Proceedings Paper

Apparatus for contamination control development in EUVA
Author(s): Takashi Aoki; Hiroyuki Kondo; Shuichi Matsunari; Hiromitsu Takase; Yoshio Gomei; Shigeru Terashima
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Paper Abstract

For the development of chemical contamination control of extreme ultraviolet (EUV) lithography, especially to prolong the lifetime of optical elements, we had established and installed the experimental apparatus on Super-ALIS, a synchrotron facility beam-line, at NTT Atsugi laboratory, Japan. The apparatus is constructed with ultra high vacuum (UHV) components, then it is achieved that the residual gas pressure less than 5x10-7 Pa with no significant hydrocarbon contaminants. Using the setup, radiation-induced oxide formation and/or carbon deposition on EUVL optics mirror can be evaluated by EUV light irradiations and in-situ measurements of the reflectance under specified partial pressure of contaminants. Sub-system to introduce and control of pressure of water vapor in the irradiation chamber between 1x10-6 and 1x10-2 Pa is available. Preliminary results about dependency to water vapor partial pressure and EUV light intensity/dose indicate that the tendency that higher degree of oxidation of Mo/Si multi-layered mirror (MLM) surface is obtained from longer irradiation time and higher ambient water vapor pressure, whereas the Ru-capped mirrors maintains negligible oxidation if water pressure is 1x10-6 Pa. Electron-beam (EB) irradiation sub-system was also mounted for the accelerated and off-line oxidation and/or carbon deposition/cleaning evaluation. Vacuum ultraviolet (VUV) light (Xe2 excimer lamp: 172nm) irradiation sub-system with oxygen introduction is also available. Significant cleaning effect is obtained while oxidation of multi-layer mirror surface was observed. Estimated cleaning rate under the oxygen pressure of 100 Pa for sputtered carbon film is about 0.03 nm/min.

Paper Details

Date Published: 6 May 2005
PDF: 10 pages
Proc. SPIE 5751, Emerging Lithographic Technologies IX, (6 May 2005); doi: 10.1117/12.600488
Show Author Affiliations
Takashi Aoki, Extreme Ultraviolet Lithography System Development Association (Japan)
Hiroyuki Kondo, Extreme Ultraviolet Lithography System Development Association (Japan)
Shuichi Matsunari, Extreme Ultraviolet Lithography System Development Association (Japan)
Hiromitsu Takase, Extreme Ultraviolet Lithography System Development Association (Japan)
Yoshio Gomei, Extreme Ultraviolet Lithography System Development Association (Japan)
Shigeru Terashima, Extreme Ultraviolet Lithography System Development Association (Japan)

Published in SPIE Proceedings Vol. 5751:
Emerging Lithographic Technologies IX
R. Scott Mackay, Editor(s)

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