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Proceedings Paper

EUV resist patterning performance from the Intel microexposure tool (MET)
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Paper Abstract

The patterning targets for EUV resists at the 32 nm node are stringent, and will require significant resist development in order to meet these targets. In this paper, we benchmark the patterning performance of current EUV resists against Intel targets. Resolution data for dense L/S structures, isolated lines, and contact hole structures show that current resists are close to meeting Intel requirements for the 32 nm node, though further optimization is needed. A trade-off is seen between LWR and sensitivity (6.0 nm LWR and 6.8 mJ/cm2 for resist A versus 11.1 nm LWR and 2.7 mJ/cm2 for resist C). However even at the higher dose, the LWR target is far from Intel’s spe. At best dose and focus sidewall angles of 85° were measured, decreasing by as much as 10° - 12° as the resist moved out of focus by 400 nm.

Paper Details

Date Published: 4 May 2005
PDF: 8 pages
Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); doi: 10.1117/12.600214
Show Author Affiliations
Heidi B. Cao, Intel Corp. (United States)
Wang Yueh, Intel Corp. (United States)
Jeanette Roberts, Intel Corp. (United States)
Bryan Rice, Intel Corp. (United States)
Robert Bristol, Intel Corp. (United States)
Manish Chandhok, Intel Corp. (United States)

Published in SPIE Proceedings Vol. 5753:
Advances in Resist Technology and Processing XXII
John L. Sturtevant, Editor(s)

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