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Proceedings Paper

Managing effects in CD control from PED and PEB in advanced DUV photomask manufacturing using FEP-171 resist
Author(s): Adisa Paulsson; Kezhao Xing; Hans Fosshaug; Axel Lundvall; Charles Bjoernberg; Johan Karlsson
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Paper Abstract

A continuing improvement in resist process is a necessity for high-end photomask fabrication. In advanced chemically amplified resist systems the lithographic performance is strongly influenced by diffusion of acid and acid quencher (i.e. bases). Beside the resist properties, e.g. size and volatility of the photoacid, the process conditions play important roles for the diffusion control. Understanding and managing these properties influences lithographic characteristics on the photomask such as CD uniformity, CD and pitch linearity, resolution, substrate contamination, clear-dark bias and iso-dense bias. In this paper we have investigated effects on the lithographic characteristics with respect to post exposure bake conditions, when using the chemically amplified resist FEP-171. We used commercially available mask blanks from the Hoya Mask Blank Division with NTAR7 chrome and an optimized resist thickness for the 248 nm laser tool at 3200Å. The photomasks were exposed on the optical DUV (248nm) Sigma7300 pattern generator. Additionally, we investigated the image stability between exposure and post exposure bake. Unlike in wafer fabrication, photomask writing requires several hours, making the resist susceptible to image blur and acid latent image degradation.

Paper Details

Date Published: 4 May 2005
PDF: 10 pages
Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); doi: 10.1117/12.599938
Show Author Affiliations
Adisa Paulsson, Micronic Laser Systems AB (Sweden)
Kezhao Xing, Micronic Laser Systems AB (Sweden)
Hans Fosshaug, Micronic Laser Systems AB (Sweden)
Axel Lundvall, Micronic Laser Systems AB (Sweden)
Charles Bjoernberg, Micronic Laser Systems AB (Sweden)
Johan Karlsson, Micronic Laser Systems AB (Sweden)

Published in SPIE Proceedings Vol. 5753:
Advances in Resist Technology and Processing XXII
John L. Sturtevant, Editor(s)

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