Critical Shape Metrology (CSM), a Monte-Carlo simulation-based technique that extracts feature shape information from top-down CD-SEM images, is applied to study advanced process steps of etched polysilicon layers. True bottom CDs and sidewall angles are among the parameters obtained during real-time wafer inspection. Comparison is made to FIB cross-sections obtained independently from select test sites.

Date Published: 10 May 2005
PDF: 6 pages
Proc. SPIE 5752, Metrology, Inspection, and Process Control for Microlithography XIX, (10 May 2005); doi: 10.1117/12.599894

Published in SPIE Proceedings Vol. 5752:
Metrology, Inspection, and Process Control for Microlithography XIX
Richard M. Silver, Editor(s)