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Proceedings Paper

Application of critical shape metrology to 90nm process
Author(s): Dmitry V. Gorelikov; John Haywood; Colin Yates
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Paper Abstract

Critical Shape Metrology (CSM), a Monte-Carlo simulation-based technique that extracts feature shape information from top-down CD-SEM images, is applied to study advanced process steps of etched polysilicon layers. True bottom CDs and sidewall angles are among the parameters obtained during real-time wafer inspection. Comparison is made to FIB cross-sections obtained independently from select test sites.

Paper Details

Date Published: 10 May 2005
PDF: 6 pages
Proc. SPIE 5752, Metrology, Inspection, and Process Control for Microlithography XIX, (10 May 2005); doi: 10.1117/12.599894
Show Author Affiliations
Dmitry V. Gorelikov, Soluris, Inc. (United States)
John Haywood, LSI Logic Corp. (United States)
Colin Yates, LSI Logic Corp. (United States)

Published in SPIE Proceedings Vol. 5752:
Metrology, Inspection, and Process Control for Microlithography XIX
Richard M. Silver, Editor(s)

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