Share Email Print

Proceedings Paper

Correlation analysis: a fast and reliable method for a better understanding of simulation models in optical lithography
Author(s): Bernd Tollkuhn; Anne Heubner; Klaus Elian; Boris Ruppenstein; Andreas Erdmann
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Nowadays, the advanced usage of simulation tools for optical lithography requires substantial knowledge about the impact of model parameters and process conditions on simulation results. In many cases up to 30 or 40 parameters have to be tuned for different experimental data in order to obtain reliable simulation results. Consequently, the investigation of the impact of all model and process parameters on simulation results can be very time consuming. Therefore, we applied a correlation analysis, a well known statistical method, that allows a sensitivity analysis of simulation parameters. We compared the results of the sensitivity analysis method with the outcome of a standard “one-factor-at-a-time-method” and discuss the advantages and disadvantages of both methodologies. A calibrated ArF photoresist model has been examined with both sensitivity analysis methods.

Paper Details

Date Published: 17 May 2005
PDF: 11 pages
Proc. SPIE 5755, Data Analysis and Modeling for Process Control II, (17 May 2005); doi: 10.1117/12.599390
Show Author Affiliations
Bernd Tollkuhn, Fraunhofer-Institut fur Integrierte Systeme (Germany)
Anne Heubner, Fraunhofer-Institut fur Integrierte Systeme (Germany)
Klaus Elian, Infineon Technologies AG (Germany)
Boris Ruppenstein, Infineon Technologies AG (Germany)
Andreas Erdmann, Fraunhofer-Institut fur Integrierte Systeme (Germany)

Published in SPIE Proceedings Vol. 5755:
Data Analysis and Modeling for Process Control II
Iraj Emami, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?