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Proceedings Paper

Comparison of EUV mask architectures by process window analysis
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Paper Abstract

Several masks have been fabricated and exposed with the small-field Micro Exposure Tool (MET) at the Advanced Light Source (ALS) synchrotron in Berkeley using EUV radiation at 13.5 nm wavelength. Investigated mask types include two different absorber masks with TaN absorber as well as an etched multilayer mask. The resulting printing performance under different illumination conditions were studied by process window analysis on wafer level. Features with resolution of 60 nm and below were resolved with all masks. The TaN absorber masks with different stack thicknesses showed a similar size of process window. The differences in process windows for line patterns were analyzed for 60 nm patterns. The implications on the choice of optimum mask architecture are discussed.

Paper Details

Date Published: 6 May 2005
PDF: 11 pages
Proc. SPIE 5751, Emerging Lithographic Technologies IX, (6 May 2005); doi: 10.1117/12.599343
Show Author Affiliations
Siegfried Schwarzl, Infineon Technologies AG (Germany)
Frank-Michael Kamm, Infineon Technologies AG (Germany)
Stefan Hirscher, Infineon Technologies AG (Germany)
Klaus Lowack, Infineon Technologies AG (Germany)
Wolf-Dieter Domke, Infineon Technologies AG (Germany)
Markus Bender, Infineon Technologies AG (Germany)
Stefan Wurm, Infineon Technologies AG (Germany)
Adam R. Pawloski, Advanced Micro Devices (United States)
Bruno La Fontaine, Advanced Micro Devices (United States)
Christian Holfeld, Advanced Mask Technology Ctr. (Germany)
Uwe Dersch, Advanced Mask Technology Ctr. (Germany)
Florian Letzkus, IMS-Chips (Germany)
Joerg Butschke, IMS-Chips (Germany)

Published in SPIE Proceedings Vol. 5751:
Emerging Lithographic Technologies IX
R. Scott Mackay, Editor(s)

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