Ultraviolet-nanoimprint lithography (UV-NIL) is a promising method for cost-effectively defining nanoscale structures at room temperature and low pressure. To apply a large-area stamp to step-and-repeat UV-NIL in an atmospheric environment for high-throughput, we proposed a new step-and-repeat UV-NIL process using an elementwise patterned stamp (EPS), which consists of elements separated by channels. The proposed UV-NIL is able to imprint an 8-in. wafer with a 5 sq. in EPS in four times. 50 - 80 nm features of the EPS were successfully transferred over 8-in. wafers. The experiments demonstrated that a large-area EPS in the step-and-repeat UV-NIL can be used for imprinting 8-in. wafers in an atmospheric environment.

Date Published: 6 May 2005
PDF: 9 pages
Proc. SPIE 5751, Emerging Lithographic Technologies IX, (6 May 2005); doi: 10.1117/12.598657

Published in SPIE Proceedings Vol. 5751:
Emerging Lithographic Technologies IX
R. Scott Mackay, Editor(s)