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Proceedings Paper

Robust lithography process control methodology anticipating CD after etching using scatterometry below 65nm node
Author(s): Tokihisa Kaneguchi; Atsushi Someya; Hiroichi Kawahira
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Paper Abstract

As the pattern feature-size of devices shrinks down to below 65 nm, it becomes more important to establish methods to control lithographic critical dimension (CD) that enable better controllability of CD after etching. This paper introduces new methods to control and optimize lithography process by precisely anticipating CD after etching. Before establishing the methods, relationships between CD after resist development and after etching were measured by using a scatterometry (iODP100 by Tokyo Electron Ltd.). As CD and side wall angle (SWA) of resist profiles can be controlled independently by adjusting exposure dose and focus offset in lithography process, it is possible to control the CD after etching by adjusting them. Moreover, since current lithography and etching process are designed based on CD budgets that have several elements such as intra-shot, intra-wafer, wafer-to-wafer and lot-to-lot CD uniformities, it is preferable to control total CD errors after etching by adjusting the elements in lithography process in anticipation of CD after etching. In addition, it is also important to control CD for various patterns, such as isolated, dense, and other patterns in various design layouts. As current optical proximity effect correction (OPC) techniques can not fully eliminate pattern density effects induced by etching, controlling CD by adjusting lithography conditions to compensate such effects will be one of the feasible solutions.

Paper Details

Date Published: 12 May 2005
PDF: 12 pages
Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2005); doi: 10.1117/12.598574
Show Author Affiliations
Tokihisa Kaneguchi, Sony Corp. (Japan)
Atsushi Someya, Sony Corp. (Japan)
Hiroichi Kawahira, Sony Corp. (Japan)

Published in SPIE Proceedings Vol. 5754:
Optical Microlithography XVIII
Bruce W. Smith, Editor(s)

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