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Proceedings Paper

Correlation of 150-mm silicon wafer site flatness with stepper performance for deep submicron applications
Author(s): Howard R. Huff; Joseph C. Vigil; Birol Kuyel; David Y. Chan; Long P. Nguyen
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Paper Abstract

An experimental study was conducted to correlate wafer site flatness SFQD with stepper performance for half-micron lines and spaces. CD measurements were taken on wafers patterned on both GCA pre-production XLS i-line and SVGL Micrascan-90 DUV steppers as well as focus measurements on the Micrascan-90. Wafer site flatness SFQD less than 0.3 micrometers was observed to be a sufficiently small variable in CD non-uniformities for these initial half-micron stepper applications.

Paper Details

Date Published: 1 June 1992
PDF: 12 pages
Proc. SPIE 1673, Integrated Circuit Metrology, Inspection, and Process Control VI, (1 June 1992); doi: 10.1117/12.59805
Show Author Affiliations
Howard R. Huff, SEMATECH (United States)
Joseph C. Vigil, SEMATECH (United States)
Birol Kuyel, SEMATECH (United States)
David Y. Chan, SEMATECH (United States)
Long P. Nguyen, SEMATECH (United States)

Published in SPIE Proceedings Vol. 1673:
Integrated Circuit Metrology, Inspection, and Process Control VI
Michael T. Postek Jr., Editor(s)

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