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Proceedings Paper

Submicrometer dimensional measurements with optical microscopy
Author(s): Stanley S. C. Chim; Gordon S. Kino
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Paper Abstract

We describe here a new approach for measuring focus/exposure dense photoresist line structures with a 1 micrometers spatial period. The algorithm depends on a data clustering technique which allows us to measure resist lines down to 0.3 micrometers . With an advanced calibration procedure, linearity between optical and SEM measurements is achieved down to 0.3 micrometers for nested focus/exposure resist structures with a standard deviation of about 10 nm.

Paper Details

Date Published: 1 June 1992
PDF: 10 pages
Proc. SPIE 1673, Integrated Circuit Metrology, Inspection, and Process Control VI, (1 June 1992); doi: 10.1117/12.59782
Show Author Affiliations
Stanley S. C. Chim, Stanford Univ. (United States)
Gordon S. Kino, Stanford Univ. (United States)

Published in SPIE Proceedings Vol. 1673:
Integrated Circuit Metrology, Inspection, and Process Control VI
Michael T. Postek Jr., Editor(s)

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