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Proceedings Paper

Novel DNQ PACs for high-resolution i-line lithography
Author(s): William R. Brunsvold; Nicholas K. Eib; Christopher F. Lyons; Steve S. Miura; Marina V. Plat; Ralph R. Dammel; O. B. Evans; M. Dalil Rahman; Dinesh N. Khanna; Sangya Jain; Ping-Hung Lu; Stanley A. Ficner
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Paper Abstract

The use of i-line lithography for the 16 to 64 Mbit DRAM device generations calls for increased performance of i-line resists. This paper reports on investigations on novel sensitizers for advanced i-line lithography, starting out with a discussion of general design criteria, then discussing methodology and results of a screening phase, and examining in greater detail a small number of selected candidates for which resolution, exposure latitude, and depth-of-focus data were obtained. Finally, a new advanced resist for i-line lithography, AZR 7500, is presented, and its performance is evaluated in terms of the above criteria as well as thermal flow resistance.

Paper Details

Date Published: 1 June 1992
PDF: 13 pages
Proc. SPIE 1672, Advances in Resist Technology and Processing IX, (1 June 1992); doi: 10.1117/12.59778
Show Author Affiliations
William R. Brunsvold, IBM General Technology Div. (United States)
Nicholas K. Eib, IBM General Technology Div. (United States)
Christopher F. Lyons, IBM General Technology Div. (United States)
Steve S. Miura, IBM General Technology Div. (United States)
Marina V. Plat, IBM General Technology Div. (United States)
Ralph R. Dammel, Hoechst Celanese Corp. (United States)
O. B. Evans, Hoechst Celanese Corp. (United States)
M. Dalil Rahman, Hoechst Celanese Corp. (United States)
Dinesh N. Khanna, Hoechst Celanese Corp. (United States)
Sangya Jain, Hoechst Celanese Corp. (United States)
Ping-Hung Lu, Hoechst Celanese Corp. (United States)
Stanley A. Ficner, Hoechst Celanese Corp. (United States)

Published in SPIE Proceedings Vol. 1672:
Advances in Resist Technology and Processing IX
Anthony E. Novembre, Editor(s)

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