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Proceedings Paper

Comparison of etching tools for resist pattern transfer
Author(s): Mark W. Horn; Mark A. Hartney; Roderick R. Kunz
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Paper Abstract

Several etching tools were evaluated for the oxygen-based plasma pattern transfer step in surface imaging and multilayer resist processes. These tools include a conventional parallel- plate reactive ion etcher, a magnetically enhanced reactive ion etcher, an electron cyclotron resonance reactor, and a Helicon (rf helical resonator) reactor. The performance of each tool was examined with respect to etch rate, etch profile, selectivity between the imaging layer and the pattern transfer layer, etch uniformity, etching residue, linewidth uniformity, and process latitude.

Paper Details

Date Published: 1 June 1992
PDF: 13 pages
Proc. SPIE 1672, Advances in Resist Technology and Processing IX, (1 June 1992); doi: 10.1117/12.59764
Show Author Affiliations
Mark W. Horn, Lincoln Lab./MIT (United States)
Mark A. Hartney, Lincoln Lab./MIT (United States)
Roderick R. Kunz, Lincoln Lab./MIT (United States)

Published in SPIE Proceedings Vol. 1672:
Advances in Resist Technology and Processing IX
Anthony E. Novembre, Editor(s)

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