Share Email Print

Proceedings Paper

Lithographic evaluation and characterization of a negative deep-UV resist system for the next generation of DRAMs
Author(s): Doowon Suh; Shane R. Palmer; Subhankar Chatterjee; Hans-Joachim Merrem; Robert C. Haltom
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

We report here the initial lithographic evaluation of AZ DN-21, a commercial, negative tone, aqueous alkali developable, chemically amplified resist. The resist was exposed with 248 nm light from a KrF laser on a Canon deep UV stepper with NA 0.37. Feature sizes down to 0.35 microns were printed with good focus and exposure latitude. The resist profiles are nearly vertical with a slight undercutting at the bottom of the feature and a slight rounding of the top. We also report some initial results from a study of the effects of delays in resist processing. For a given dose, delays in the processing increased the measured linewidths. Results from a calculation of the effective activation energy for crosslinking are also presented. For the PEB temperatures investigated, the effective energy was found to be a function of the PEB temperature.

Paper Details

Date Published: 1 June 1992
PDF: 11 pages
Proc. SPIE 1672, Advances in Resist Technology and Processing IX, (1 June 1992); doi: 10.1117/12.59758
Show Author Affiliations
Doowon Suh, Texas Instruments Inc. (United States)
Shane R. Palmer, Texas Instruments Inc. (United States)
Subhankar Chatterjee, Hoechst Celanese Corp. (United States)
Hans-Joachim Merrem, Hoechst Celanese Corp. (United States)
Robert C. Haltom, Hoechst Celanese Corp. (United States)

Published in SPIE Proceedings Vol. 1672:
Advances in Resist Technology and Processing IX
Anthony E. Novembre, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?