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Proceedings Paper

Quarter-micron KrF excimer laser lithography with a chemically amplifying negative resist
Author(s): Akira Oikawa; Shuichi Miyata; Kimihisa Maeda; Hiroyuki Tanaka; Kenji Nakagawa
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Paper Abstract

We have developed X123, a chemically amplifying negative resist, for KrF excimer-laser lithography. X123 mainly consists of a highly transparent polyvinylphenol derivative, purified hexamethoxymethylmelamine, and a photo acid generator. Resist performance was improved by refinement of chemicals, a quantitative study of the components, and a study of processing conditions. The resolution of X123 is 0.25 micrometers under optimized processing conditions without phase shift masks. Its depth-of-focus is 1.0 micrometers for 0.30 micrometers line-and-space (L&S) patterns and 1.5 micrometers for 0.35 micrometers L&S patterns. Other process latitudes are also wide. X123 shows promise for future device fabrication.

Paper Details

Date Published: 1 June 1992
PDF: 8 pages
Proc. SPIE 1672, Advances in Resist Technology and Processing IX, (1 June 1992); doi: 10.1117/12.59756
Show Author Affiliations
Akira Oikawa, Fujitsu Ltd. (Japan)
Shuichi Miyata, Fujitsu Ltd. (Japan)
Kimihisa Maeda, Fujitsu Ltd. (Japan)
Hiroyuki Tanaka, Fujitsu Ltd. (Japan)
Kenji Nakagawa, Fujitsu Ltd. (Japan)

Published in SPIE Proceedings Vol. 1672:
Advances in Resist Technology and Processing IX
Anthony E. Novembre, Editor(s)

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