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Proceedings Paper

Toward the development of a stable chemically amplified DUV positive photoresist
Author(s): James W. Thackeray; Diane L. Canistro; Mark Denison; Joseph J. Ferrari; Richard C. Hemond; David R. Medeiros; George W. Orsula; Edward K. Pavelchek; Martha M. Rajaratnam; Roger F. Sinta
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Paper Abstract

This paper reports the initial results of an improved chemically amplified, positive-tone photoresist for use in DUV applications. This photoresist is shown to have the following properties: low absorbance at 248 nm (0.22/micrometers ), high resolution (0.35 micrometers lines and spaces in 1.0 micrometers thick resist), and good environmental stability. The resist did not show evidence of `T-tops' nor did any linewidth change occur over a five hour period.

Paper Details

Date Published: 1 June 1992
PDF: 9 pages
Proc. SPIE 1672, Advances in Resist Technology and Processing IX, (1 June 1992); doi: 10.1117/12.59722
Show Author Affiliations
James W. Thackeray, Shipley Co. Inc. (United States)
Diane L. Canistro, Shipley Co. Inc. (United States)
Mark Denison, Shipley Co. Inc. (United States)
Joseph J. Ferrari, Shipley Co. Inc. (United States)
Richard C. Hemond, Shipley Co. Inc. (United States)
David R. Medeiros, Shipley Co. Inc. (United States)
George W. Orsula, Shipley Co. Inc. (United States)
Edward K. Pavelchek, Shipley Co. Inc. (United States)
Martha M. Rajaratnam, Shipley Co. Inc. (United States)
Roger F. Sinta, Shipley Co. Inc. (United States)

Published in SPIE Proceedings Vol. 1672:
Advances in Resist Technology and Processing IX
Anthony E. Novembre, Editor(s)

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