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Proceedings Paper

GaInAsP/InP quantum-wire lasers and distributed reflector lasers with wirelike active regions by lithography and regrowth
Author(s): Shigehisa Arai; Hideki Yagi; Kazuya Ohira; Takeo Maruyama; Shigeo Tamura
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Paper Abstract

For high performance operation of semiconductor lasers consisting of low-dimensional electron systems as the active medium, a good size uniformity and a formation of low-damage interfaces are essentially required. In this paper, we review our recent results obtained by GaInAsP/InP based long-wavelength lasers consisting of quantum-wire structures fabricated by electron beam lithography, CH4/H2-reactive ion etching and 2-step organo-metallic vapor-phase-epitaxial growth processes. Good size uniformity of vertically-stacked multiple-quantum-wire structures was obtained with a standard deviation of less than ±2 nm. By using a strain-compensated quantum-well structure as an initial wafer, non-radiative recombinations at etched/regrown interfaces were fairly reduced, which resulted in a room-temperature continuous-wave (RT-CW) operation of a quantum-wire laser for more than 15,000 hours. By taking an advantage of this fabrication method, 1540 nm wavelength quantum-wire distributed feedback (DFB) lasers were also realized for the first time with relatively low threshold current and high differential quantum efficiency under a RT-CW condition. Moreover, by utilizing the energy blue shift due to the lateral quantum confinement effect, a low threshold current operation with a stable single-mode property has been successfully demonstrated for distributed-reflector (DR) lasers consisting of a DFB section with wirelike active regions and a passive distributed-Bragg-reflector (DBR) section with narrow quantum-wire active regions.

Paper Details

Date Published: 1 April 2005
PDF: 15 pages
Proc. SPIE 5738, Novel In-Plane Semiconductor Lasers IV, (1 April 2005); doi: 10.1117/12.597127
Show Author Affiliations
Shigehisa Arai, Tokyo Institute of Technology (Japan)
Hideki Yagi, Tokyo Institute of Technology (Japan)
Kazuya Ohira, Tokyo Institute of Technology (Japan)
Takeo Maruyama, Tokyo Institute of Technology (Japan)
Shigeo Tamura, Tokyo Institute of Technology (Japan)

Published in SPIE Proceedings Vol. 5738:
Novel In-Plane Semiconductor Lasers IV
Carmen Mermelstein; David P. Bour, Editor(s)

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