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Proceedings Paper

Recent progress of AlInGaN laser diodes
Author(s): Shin-ichi Nagahama; Yasunobu Sugimoto; Tokuya Kozaki; Takashi Mukai
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Paper Abstract

Nine years has passed since the initial development of GaN-based violet laser diodes (LDs) in the 405 nm wavelength range in 1995. Starting with next-generation high-density optical discs, the commercial use of violet LDs has been adopted in many new fields, such as biomedical, reprographic, and exposure fields. Recently, lasing wavelength has broadened to cover from the ultraviolet (UV) to blue-green regions, which enabled other new applications. In this paper, the current status of GaN-based LDs from the UV to blue-green regions is reported.

Paper Details

Date Published: 1 April 2005
PDF: 6 pages
Proc. SPIE 5738, Novel In-Plane Semiconductor Lasers IV, (1 April 2005); doi: 10.1117/12.597098
Show Author Affiliations
Shin-ichi Nagahama, Nichia Corp. (Japan)
Yasunobu Sugimoto, Nichia Corp. (Japan)
Tokuya Kozaki, Nichia Corp. (Japan)
Takashi Mukai, Nichia Corp. (Japan)

Published in SPIE Proceedings Vol. 5738:
Novel In-Plane Semiconductor Lasers IV
Carmen Mermelstein; David P. Bour, Editor(s)

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