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Proceedings Paper

Photoluminescence characterization of quantum dot laser epitaxy
Author(s): Yan Li; Y. C. Xin; Hui Su; Luke F Lester; Allen L. Gray; S. Luong; Kathy Sun; Z. Zou; John Zilko
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Paper Abstract

The correlations between the photoluminescence (PL) wavelength, integrated intensity, peak intensity, and FWHM with laser diode performance such as the maximum gain, injection efficiency, and transparency current density are studied in this work. The primary outcome is that the variation in PL intensity within a wafer originates primarily from differences in the radiative and non-radiative recombination rates and not from dot density variation. PL generated from 980 nm wavelength pumping appears to give more consistent data in assessing the optical quality of quantum dots that emit in the 1300 nm from the ground state.

Paper Details

Date Published: 4 April 2005
PDF: 8 pages
Proc. SPIE 5734, Quantum Dots, Nanoparticles, and Nanoclusters II, (4 April 2005); doi: 10.1117/12.597089
Show Author Affiliations
Yan Li, Univ. of New Mexico (United States)
Y. C. Xin, Univ. of New Mexico (United States)
Hui Su, Univ. of New Mexico (United States)
Luke F Lester, Univ. of New Mexico (United States)
Allen L. Gray, Zia Laser, Inc. (United States)
S. Luong, Zia Laser, Inc. (United States)
Kathy Sun, Zia Laser, Inc. (United States)
Z. Zou, Zia Laser, Inc. (United States)
John Zilko, Zia Laser, Inc. (United States)

Published in SPIE Proceedings Vol. 5734:
Quantum Dots, Nanoparticles, and Nanoclusters II
Diana L. Huffaker; Pallab K. Bhattacharya, Editor(s)

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