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Proceedings Paper

Study on the resist materials leaching from resist film during immersion exposure for 193nm using QCM method
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Paper Abstract

F2 lithography and 193nm immersion lithography are considered candidates for 65nm node lithography technology. Of these two, 193nm immersion lithography, the latest incarnation of ArF lithography, has attracted more attention. Immersion lithography is different from conventional dry lithography in that the resist is exposed in liquid. Thus, the resist materials leaching from the resist film during exposure and the dissolution of acids generated by the exposure cause problems. Particularly, the resist materials leaching tends to contaminate the surface of the lens. We have been conducting studies on the leaching during exposure using the QCM method. In the present work, we apply this method to the immersion exposure. We report here the results of an in-situ measurement of the resist mass change during immersion exposure and discuss our analysis regarding the resist materials leaching from the resist film during the exposure.

Paper Details

Date Published: 4 May 2005
PDF: 12 pages
Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); doi: 10.1117/12.597003
Show Author Affiliations
Atsushi Sekiguchi, Lithotech Japan Corp. (Japan)
Yoshihisa Sensu, Lithotech Japan Corp. (Japan)
Youichi Minami, Lithotech Japan Corp. (Japan)

Published in SPIE Proceedings Vol. 5753:
Advances in Resist Technology and Processing XXII
John L. Sturtevant, Editor(s)

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