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Proceedings Paper

ZnO thin film templates for GaN-based devices
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Paper Abstract

GaN-based optoelectronic devices are plagued by a tendency to non-radiative transitions linked to defects in the active layers. This problem has its origin in (1) intrinsic factors such as GaN's relatively low exciton binding energy (~24meV) and (2) extrinsic factors including the poor availability of native substrates good enough to significantly suppress the defect density. Indeed, the quality and availability of large-area bulk GaN substrates is currently considered a key problem for the continuing development of improved GaN-based devices. Since development of bulk GaN substrates of suitable quality has proven very difficult, a considerable amount of effort is also being directed towards the development of alternative substrates which offer advantages compared to those in widespread use (c-sapphire and 6H SiC). ZnO is promising as a substrate material for GaN because it has the same wurtzite structure and a relatively small lattice mismatch (~1.8%). In this paper, we discuss use of ZnO thin films as templates for GaN based LED.

Paper Details

Date Published: 25 March 2005
PDF: 5 pages
Proc. SPIE 5732, Quantum Sensing and Nanophotonic Devices II, (25 March 2005); doi: 10.1117/12.596912
Show Author Affiliations
David J. Rogers, Nanovation SARL (France)
Ferechteh Hosseini Teherani, Nanovation SARL (France)
Alireza Yasan, Northwestern Univ. (United States)
Ryan P. McClintock, Northwestern Univ. (United States)
Kathryn Mayes, Northwestern Univ. (United States)
Shaban Ramezani Darvish, Northwestern Univ. (United States)
Patrick Kung, Northwestern Univ. (United States)
Manijeh Razeghi, Northwestern Univ. (United States)
Guy Garry, Thales Research and Technology (France)


Published in SPIE Proceedings Vol. 5732:
Quantum Sensing and Nanophotonic Devices II
Manijeh Razeghi; Gail J. Brown, Editor(s)

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