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Proceedings Paper

Silicon-on-insulator based quasi 3D photonic crystal structures
Author(s): Marc Zelsmann; Emmanuel Picard; Vincent Calvo; Thomas Charvolin; Emmanuel Hadji; Hubert Moriceau; Michel Heitzmann; M. E. Nier; Christian Seassal; Xavier Letartre
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Paper Abstract

A new kind of substrate called Silicon-On-Mirror has been fabricated for nanophotonics applications. It is composed of a monocrystalline silicon layer separated from the silicon substrate by a buried distributed Bragg reflector. Photoluminescence of silicon at 80 K is used to investigate two-dimensional (2D) photonic crystal hexagonal microcavities etched in the monocrystalline silicon layer. Two types of substrates are compared: silicon-on-insulator (SOI) substrates and the new substrates where the silicon layer is bonded on a buried distributed Bragg reflector (DBR). Quality factors of the in-plane resonant modes are analyzed both experimentally and theoretically when the substrate structure is changing. It is shown that the underlying DBR can enhance the in-plane quality factors by a factor 2.5 by reducing the losses. The out-of-plane light extraction efficiency of the cavities and of defectless photonic crystals are also discussed.

Paper Details

Date Published: 13 April 2005
PDF: 9 pages
Proc. SPIE 5733, Photonic Crystal Materials and Devices III, (13 April 2005); doi: 10.1117/12.593868
Show Author Affiliations
Marc Zelsmann, CEA-Grenoble (France)
Emmanuel Picard, CEA-Grenoble (France)
Vincent Calvo, CEA-Grenoble (France)
Thomas Charvolin, CEA-Grenoble (France)
Emmanuel Hadji, CEA-Grenoble (France)
Hubert Moriceau, CEA-Grenoble (France)
Michel Heitzmann, CEA-Grenoble (France)
M. E. Nier, CEA-Grenoble (France)
Christian Seassal, Lab. d'Electronique, Optoelectronique et Microsystemes, CNRS and Ecole Centrale de Lyon (France)
Xavier Letartre, Lab. d'Electronique, Optoelectronique et Microsystemes, CNRS and Ecole Centrale de Lyon (France)


Published in SPIE Proceedings Vol. 5733:
Photonic Crystal Materials and Devices III
Ali Adibi; Shawn-Yu Lin; Axel Scherer, Editor(s)

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