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Proceedings Paper

Improved wavelength stability of GaAs laser diodes under amplitude modulation
Author(s): William J. Gignac; Richard R. Craig; Stephen O'Brien; David G. Mehuys; David F. Welch; Donald R. Scifres
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Paper Abstract

Spectral properties of commercially available Fabry-Perot and distributed Bragg reflector (DBR) GaAlAs and InGaAs laser diodes operating under deep current modulation are presented. At kHz modulation frequencies spectral widths of commercial diodes are 2.5 nm 15 dB down from the maximum intensity. Structural modifications can narrow this value to 0.4 nm. Prototype DBR devices with maximum output power of 110 mW exhibit extremely narrow CW linewidths of 4 MHz, and are suitable for coherent communication as well as direct detection communication formats.

Paper Details

Date Published: 9 June 1992
PDF: 9 pages
Proc. SPIE 1635, Free-Space Laser Communication Technologies IV, (9 June 1992); doi: 10.1117/12.59285
Show Author Affiliations
William J. Gignac, Spectra Diode Labs., Inc. (United States)
Richard R. Craig, Spectra Diode Labs., Inc. (United States)
Stephen O'Brien, Spectra Diode Labs., Inc. (United States)
David G. Mehuys, Spectra Diode Labs., Inc. (United States)
David F. Welch, Spectra Diode Labs., Inc. (United States)
Donald R. Scifres, Spectra Diode Labs., Inc. (United States)

Published in SPIE Proceedings Vol. 1635:
Free-Space Laser Communication Technologies IV
David L. Begley; Bernard D. Seery, Editor(s)

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