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Proceedings Paper

High-temperature continuous-wave operation of 1310-nm single-mode grating-outcoupled surface-emitting semiconductor lasers
Author(s): Taha Masood; Nuditha V. Amarasinghe; Scott McWilliams; Steve Patterson; David Roh; Gary A. Evans; Jerome Butler
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Paper Abstract

High temperature continuous-wave (CW) operation of 1310-nm single-frequency grating-outcoupled surface emitting (GSE) semiconductor lasers with output powers exceeding 3.0 mW into a multi-mode fiber, threshold currents below 30 mA and with > 30 dB side-mode suppression ratios at temperatures of up to 85 C are reported. These lasers consist of a 400 um long horizontal cavity, and a 15 um long second-order outcoupler grating sandwiched between 200 um long first-order distributed Bragg reflector (DBRs) gratings. Higher output powers can be achieved with longer outcoupler gratings. These GSE lasers operate at 3.125 Gbps and have a full-width at half-maximum (FWHM) beam divergence of 7 x 13 degrees.

Paper Details

Date Published: 1 April 2005
PDF: 14 pages
Proc. SPIE 5738, Novel In-Plane Semiconductor Lasers IV, (1 April 2005); doi: 10.1117/12.591827
Show Author Affiliations
Taha Masood, Photodigm, Inc. (United States)
Nuditha V. Amarasinghe, Photodigm, Inc. (United States)
Scott McWilliams, Photodigm, Inc. (United States)
Steve Patterson, Photodigm, Inc. (United States)
David Roh, Photodigm, Inc. (United States)
Gary A. Evans, Photodigm, Inc. (United States)
Southern Methodist Univ. (United States)
Jerome Butler, Southern Methodist Univ. (United States)

Published in SPIE Proceedings Vol. 5738:
Novel In-Plane Semiconductor Lasers IV
Carmen Mermelstein; David P. Bour, Editor(s)

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