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Proceedings Paper

Deep traps at MOCVD GaAs and regrown AlxGa1-xAs interfaces
Author(s): Graciela R. Guel; Kevin J. Malloy; Christian F. Schaus; Michael Sun; Eric A. Armour; Kang Zheng; T. H. Shiau
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Paper Abstract

Deep level transient spectroscopy (DLTS) of deep levels occurring at MOCVD grown and regrown interfaces is described as a function of surface preparation. We examine two types of interfaces: 1 ) nGaAs grown on SI-GaAs and 2) A10,1Ga0,9As regrowth on Alo.lGao,9As. Surface preparation includes both shallow and deep wet etching, passivation with (NH)2S, and in-situ heat treatments and HCL etching. A new electron trap with EcEa 0.1 1 eV and 1019 cm2 and a new minority carrier trap with Ea E 0.18 eV and 10-15 cm2 were found in GaAs samples. The minority carrier trap is related to sulphur passivation. Four traps were found in the AlGai..As regrown samples. It is demonstrated that (NH)2S passivation before MOCVD improves interface quality for both the GaAs and Al1Ga0,9As grown and regrown layers.

Paper Details

Date Published: 26 June 1992
PDF: 7 pages
Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); doi: 10.1117/12.59158
Show Author Affiliations
Graciela R. Guel, Univ. of New Mexico (United States)
Kevin J. Malloy, Univ. of New Mexico (United States)
Christian F. Schaus, Univ. of New Mexico (United States)
Michael Sun, Univ. of New Mexico (United States)
Eric A. Armour, Univ. of New Mexico (United States)
Kang Zheng, Univ. of New Mexico (United States)
T. H. Shiau, Univ. of New Mexico (United States)

Published in SPIE Proceedings Vol. 1634:
Laser Diode Technology and Applications IV
Daniel S. Renner, Editor(s)

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