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Proceedings Paper

High-power single-mode strained-layer lasers emitting at 980 nm
Author(s): Hal A. Zarem; Joel S. Paslaski; Michael Mittelstein; Jeffrey E. Ungar; Israel Ury
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Paper Abstract

Highpower single mode InGaAs lasers for emitting at 980mn have been developed. Life test data and failure analysis results are discussed. Coupling efficiency into single mode fiber as a function of beam ellipticity is also studied.

Paper Details

Date Published: 26 June 1992
PDF: 5 pages
Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); doi: 10.1117/12.59146
Show Author Affiliations
Hal A. Zarem, Ortel Corp. (United States)
Joel S. Paslaski, Ortel Corp. (United States)
Michael Mittelstein, Ortel Corp. (United States)
Jeffrey E. Ungar, Ortel Corp. (United States)
Israel Ury, Ortel Corp. (United States)

Published in SPIE Proceedings Vol. 1634:
Laser Diode Technology and Applications IV
Daniel S. Renner, Editor(s)

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