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Proceedings Paper

Device-degradation phenomena in III-V semiconductor lasers and LEDs
Author(s): Osamu Ueda
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Paper Abstract

The current status and understanding of various degradation phenomena in III-V optoelectronic devices are discussed, with special consideration given to semiconductor lasers and light emitting diodes fabricated from GaAlAs/GaAs, InGaAsP/InP, and InGaAsP/InGaP/GaAd double-heterostructure materials. Three major degradation phenomena are discussed: rapid degradation, gradual degradation, and catastrophic failure. For each type of these degradation phenomena, methods for eliminating degradation are proposed.

Paper Details

Date Published: 26 June 1992
PDF: 14 pages
Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); doi: 10.1117/12.59140
Show Author Affiliations
Osamu Ueda, Fujitsu Labs. Ltd. (Japan)

Published in SPIE Proceedings Vol. 1634:
Laser Diode Technology and Applications IV
Daniel S. Renner, Editor(s)

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