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Proceedings Paper

Thick lattice-matched GaInNAs films in photodetector applications
Author(s): David Jackrel; Homan Yuen; Seth Bank; Mark Wistey; Junxian Fu; Xiaojun Yu; Zhilong Rao; James S. Harris
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Paper Abstract

The dilute-nitride GaInNAs shows great promise in becoming the next choice for long-wavelength (0.9 to 1.6 μm) photodetector applications due to the ability for it to be grown lattice-matched on GaAs substrates. GaAs-based devices have several advantages over InP-based devices, such as substrate cost, convenience of processing, and optoelectronic band parameters. This paper will present results from the first high-quality thick GaInNAs films grown by solid state molecular beam epitaxy with a nitrogen plasma source and the first high efficiency photodetectors which have been fabricated from those materials. GaInNAs films up to 2 microns thick have been grown coherently on GaAs substrates. These films exhibit reasonable photoluminescence intensities at peak wavelengths of 1.22 to 1.13 μm before and after a rapid thermal anneal at a series of temperatures. PIN photodiodes with these thick GaInNAs films in the intrinsic regions show responsivity (better than 0.5 A/W at 1.064 μm), dark current (200 nA at -2 V), and signal-to-noise ratio (greater than 105) approaching those of commercially available InGaAs/InP devices. Furthermore, it will be shown that these devices show significantly lower dark current and higher signal-to-noise ratio than similar metamorphic InGaAs/GaAs structures.

Paper Details

Date Published: 7 April 2005
PDF: 8 pages
Proc. SPIE 5726, Semiconductor Photodetectors II, (7 April 2005); doi: 10.1117/12.591315
Show Author Affiliations
David Jackrel, Stanford Univ. (United States)
Homan Yuen, Stanford Univ. (United States)
Seth Bank, Stanford Univ. (United States)
Mark Wistey, Stanford Univ. (United States)
Junxian Fu, Stanford Univ. (United States)
Xiaojun Yu, Stanford Univ. (United States)
Zhilong Rao, Stanford Univ. (United States)
James S. Harris, Stanford Univ. (United States)

Published in SPIE Proceedings Vol. 5726:
Semiconductor Photodetectors II
Marshall J. Cohen; Eustace L. Dereniak, Editor(s)

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