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Proceedings Paper

Light-emitting diodes based on InP quantum dots in GaP(100)
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Paper Abstract

The growth, fabrication, and device characterization of the light-emitting diodes based on InP quantum-dot within a GaP matrix and on a GaP(100) substrate are described and discussed. The diode structures are grown using gas-source molecular beam epitaxy. Electroluminescence has been measured under a variety of bias conditions and temperatures. A green emission line at about 550 nm appears to result from carrier recombination in the strained InP wetting layer. Carrier recombination in the InP quantum dots results in red emission at about 720 nm.

Paper Details

Date Published: 7 March 2005
PDF: 7 pages
Proc. SPIE 5739, Light-Emitting Diodes: Research, Manufacturing, and Applications IX, (7 March 2005); doi: 10.1117/12.591299
Show Author Affiliations
Fariba Hatami, Stanford Univ. (United States)
Vincenzo Lordi, Stanford Univ. (United States)
James S. Harris, Stanford Univ. (United States)
William Ted Masselink, Humboldt-Univ. zu Berlin (Germany)

Published in SPIE Proceedings Vol. 5739:
Light-Emitting Diodes: Research, Manufacturing, and Applications IX
Steve A. Stockman; H. Walter Yao; E. Fred Schubert, Editor(s)

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