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Proceedings Paper

Etching three-dimensional photonic crystals in GaAs
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Paper Abstract

We present an efficient method for the fabrication of three-dimensional photonic crystals in GaAs-based materials. The method exploits the dependence of the oxidation rate of AlGaAs on the aluminum content in the alloy. As a result, a wide range of oxidation profiles is possible. The oxidation profiles are determined by the Al concentration profiles in a GaAs/AlGaAs stack grown by molecular beam epitaxy, and the resulting three-dimensional structure depends on the initial two-dimensional pattern defined by standard lithography. We detail the process and present preliminary results showing the viability of the method to realize three-dimensional photonic crystals of various geometries.

Paper Details

Date Published: 22 January 2005
PDF: 8 pages
Proc. SPIE 5720, Micromachining Technology for Micro-Optics and Nano-Optics III, (22 January 2005); doi: 10.1117/12.591282
Show Author Affiliations
Janusz A. Murakowski, Univ. of Delaware (United States)
Chris Schuetz, Univ. of Delaware (United States)
Garrett J. Schneider, Univ. of Delaware (United States)
Dennis W. Prather, Univ. of Delaware (United States)

Published in SPIE Proceedings Vol. 5720:
Micromachining Technology for Micro-Optics and Nano-Optics III
Eric G. Johnson; Gregory P. Nordin; Thomas J. Suleski, Editor(s)

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